Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation: Fid-Bau Portal

Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation

Ciobanu, F. / Pensl, G. / Afanas ev, V. / Schoner, A.

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Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation

Ciobanu, F. / Pensl, G. / Afanas ev, V. / Schoner, A.

Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation

Ciobanu, F. / Pensl, G. / Afanas ev, V. / Schoner, A.

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Check availability in my library

Order at Subito €

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Document information

Title:

Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation

Contributors:

Ciobanu, F. (author) / Pensl, G. (author) / Afanas ev, V. (author) / Schoner, A. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 693-696

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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