Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation: Fid-Bau Portal

Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Hijikata, Y. / Yoshida, S. / Moscatelli, F. / Poggi, A. / Solmi, S. / Cristiani, S. / Nipoti, R.

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Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Hijikata, Y. / Yoshida, S. / Moscatelli, F. / Poggi, A. / Solmi, S. / Cristiani, S. / Nipoti, R.

Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Hijikata, Y. / Yoshida, S. / Moscatelli, F. / Poggi, A. / Solmi, S. / Cristiani, S. / Nipoti, R.

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Title:

Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Contributors:

Hijikata, Y. (author) / Yoshida, S. (author) / Moscatelli, F. (author) / Poggi, A. (author) / Solmi, S. (author) / Cristiani, S. (author) / Nipoti, R. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K.

Published in:

Silicon Carbide and Related Materials 2006 ; 651-654

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Poggi, A. / Nipoti, R. / Solmi, S. et al. | British Library Online Contents | 2004

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