Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum: Fid-Bau Portal

Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

Frank, T. / Beljakowa, S. / Pensl, G. / Kimoto, T. / Afanas ev, V.

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Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

Frank, T. / Beljakowa, S. / Pensl, G. / Kimoto, T. / Afanas ev, V.

Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

Frank, T. / Beljakowa, S. / Pensl, G. / Kimoto, T. / Afanas ev, V.

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Title:

Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

Contributors:

Frank, T. (author) / Beljakowa, S. (author) / Pensl, G. (author) / Kimoto, T. (author) / Afanas ev, V. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

Published in:

Silicon Carbide and Related Materials 2006 ; 555-560

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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