Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas: Fid-Bau Portal

Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas

Powell, J. A. / Neudeck, P. G. / Trunek, A. J. / Abel, P. B.

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Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas

Powell, J. A. / Neudeck, P. G. / Trunek, A. J. / Abel, P. B.

Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas

Powell, J. A. / Neudeck, P. G. / Trunek, A. J. / Abel, P. B.

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Check availability in my library

Order at Subito €

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Document information

Title:

Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas

Contributors:

Powell, J. A. (author) / Neudeck, P. G. (author) / Trunek, A. J. (author) / Abel, P. B. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 753-756

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas

Du, H. / Skowronski, M. / Neudeck, P. G. et al. | British Library Online Contents | 2006

High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

Spry, D. J. / Trunek, A. J. / Neudeck, P. G. | British Library Online Contents | 2004

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

Neudeck, P. G. / Powell, J. A. / Trunek, A. J. et al. | British Library Online Contents | 2004

Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy

Neudeck, P. G. / Powell, J. A. / Trunek, A. J. et al. | British Library Online Contents | 2002