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Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
Du, H. ( author ) / Skowronski, M. ( author ) / Neudeck, P. G. ( author ) / Trunek, A. J. ( author ) / Spry, D. J. ( author ) / Powell, J. A. ( author ) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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