Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas: Fid-Bau Portal

Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Myers-Ward, R.L. / Nyakiti, L.O. / Hite, J.K. / Glembocki, O.J. / Bezares, F.J. / Caldwell, J.D. / Imhoff, E.A. / Hobart, K.D. / Culbertson, J.C. / Picard, Y.N.

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Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Myers-Ward, R.L. / Nyakiti, L.O. / Hite, J.K. / Glembocki, O.J. / Bezares, F.J. / Caldwell, J.D. / Imhoff, E.A. / Hobart, K.D. / Culbertson, J.C. / Picard, Y.N.

Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Myers-Ward, R.L. / Nyakiti, L.O. / Hite, J.K. / Glembocki, O.J. / Bezares, F.J. / Caldwell, J.D. / Imhoff, E.A. / Hobart, K.D. / Culbertson, J.C. / Picard, Y.N.

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Title:

Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Contributors:

Myers-Ward, R.L. (author) / Nyakiti, L.O. (author) / Hite, J.K. (author) / Glembocki, O.J. (author) / Bezares, F.J. (author) / Caldwell, J.D. (author) / Imhoff, E.A. (author) / Hobart, K.D. (author) / Culbertson, J.C. (author) / Picard, Y.N. (author)

Published in:

Silicon Carbide and Related Materials 2010 ; 119-122

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Neudeck, P. G. / Powell, J. A. / Trunek, A. J. et al. | British Library Online Contents | 2004

Lateral ordering of Ge islands on Si mesas made by selective epitaxial growth

Vescan, L. / Stoica, T. / Hollander, B. | British Library Online Contents | 2002

Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas

Powell, J. A. / Neudeck, P. G. / Trunek, A. J. et al. | British Library Online Contents | 2005

Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy

Neudeck, P. G. / Powell, J. A. / Trunek, A. J. et al. | British Library Online Contents | 2002