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Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
Vang, H. (author) / Scharnholz, S. (author) / Raynaud, C. (author) / Lazar, M. (author) / Paques, G. (author) / Planson, D. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 1011-1014
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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