Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material

Gudjonsson, G. / Olafsson, H. O. / Allerstam, F. et al. | British Library Online Contents | 2005

Rare-earth gate oxides for GaAs MOSFET application

Kwon, K. H. / Yang, J. K. / Park, H. H. et al. | British Library Online Contents | 2006

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Kobayashi, M. / Uchida, H. / Minami, A. et al. | British Library Online Contents | 2011

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

Sveinbjornsson, E. O. / Olafsson, H. O. / Gudjonsson, G. et al. | British Library Online Contents | 2005

Band offsets of high K gate oxides on high mobility semiconductors

Robertson, J. / Falabretti, B. | British Library Online Contents | 2006