A platform for research: civil engineering, architecture and urbanism
Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates
Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates
Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates
Kukli, K. (author) / Ritala, M. (author) / Pilvi, T. (author) / Aaltonen, T. (author) / Aarik, J. (author) / Lautala, M. (author) / Leskela, M. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 118 ; 112-116
2005-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Silicon surface passivation using thin HfO2 films by atomic layer deposition
British Library Online Contents | 2015
|Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
British Library Online Contents | 2014
|British Library Online Contents | 2018
|British Library Online Contents | 2006
|British Library Online Contents | 2010
|