Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films: Fid-Bau Portal

Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films

Aarik, J. / Aidla, A. / Kasikov, A. / Mandar, H. / Rammula, R. / Sammelselg, V.

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Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films

Aarik, J. / Aidla, A. / Kasikov, A. / Mandar, H. / Rammula, R. / Sammelselg, V.

Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films

Aarik, J. / Aidla, A. / Kasikov, A. / Mandar, H. / Rammula, R. / Sammelselg, V.

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Check availability in my library

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Document information

Title:

Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films

Contributors:

Aarik, J. (author) / Aidla, A. (author) / Kasikov, A. (author) / Mandar, H. (author) / Rammula, R. (author) / Sammelselg, V. (author)

Published in:

APPLIED SURFACE SCIENCE ; 252 ; 5723-5734

Publication date:

2006-01-01

Size:

12 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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