Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xNx layers: Fid-Bau Portal

Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xNx layers

Bousbih, F. / Bouzid, S. B. / Hamdouni, A. / Chtourou, R. / Harmand, J. C.

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Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xNx layers

Bousbih, F. / Bouzid, S. B. / Hamdouni, A. / Chtourou, R. / Harmand, J. C.

Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xNx layers

Bousbih, F. / Bouzid, S. B. / Hamdouni, A. / Chtourou, R. / Harmand, J. C.

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Document information

Title:

Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xNx layers

Contributors:

Bousbih, F. (author) / Bouzid, S. B. (author) / Hamdouni, A. (author) / Chtourou, R. (author) / Harmand, J. C. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 123 ; 211-215

Publication date:

2005-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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