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    SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

    New search for: Bogumilowicz, Y.
    New search for: Hartmann, J. M.
    New search for: Cherkashin, N.
    New search for: Claverie, A.
    New search for: Rolland, G.
    New search for: Billon, T.

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    SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

    New search for: Bogumilowicz, Y.
    New search for: Hartmann, J. M.
    New search for: Cherkashin, N.
    New search for: Claverie, A.
    New search for: Rolland, G.
    New search for: Billon, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

    New search for: Bogumilowicz, Y.
    New search for: Hartmann, J. M.
    New search for: Cherkashin, N.
    New search for: Claverie, A.
    New search for: Rolland, G.
    New search for: Billon, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

    Contributors:

    Bogumilowicz, Y. (author) / Hartmann, J. M. (author) / Cherkashin, N. (author) / Claverie, A. (author) / Rolland, G. (author) / Billon, T. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 113-117

    Publication date:

    2005-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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