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    Qualitative doping area characterization of SONOS transistor utilizing scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM)

    New search for: Heo, J.
    New search for: Kim, D.
    New search for: Kim, C. w.
    New search for: Chung, I.

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    Qualitative doping area characterization of SONOS transistor utilizing scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM)

    New search for: Heo, J.
    New search for: Kim, D.
    New search for: Kim, C. w.
    New search for: Chung, I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Qualitative doping area characterization of SONOS transistor utilizing scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM)

    New search for: Heo, J.
    New search for: Kim, D.
    New search for: Kim, C. w.
    New search for: Chung, I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Qualitative doping area characterization of SONOS transistor utilizing scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM)

    Contributors:

    Heo, J. (author) / Kim, D. (author) / Kim, C. w. (author) / Chung, I. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 301-304

    Publication date:

    2005-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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