Characteristics of silicon p-n junction formed by ion implantation with in situ ultrasound treatment: Fid-Bau Portal

Characteristics of silicon p-n junction formed by ion implantation with in situ ultrasound treatment

Melnik, V. P. / Olikh, Y. M. / Popov, V. G. / Romanyuk, B. M. / Goltvyanskii, Y. V. / Evtukh, A. A.

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Characteristics of silicon p-n junction formed by ion implantation with in situ ultrasound treatment

Melnik, V. P. / Olikh, Y. M. / Popov, V. G. / Romanyuk, B. M. / Goltvyanskii, Y. V. / Evtukh, A. A.

Characteristics of silicon p-n junction formed by ion implantation with in situ ultrasound treatment

Melnik, V. P. / Olikh, Y. M. / Popov, V. G. / Romanyuk, B. M. / Goltvyanskii, Y. V. / Evtukh, A. A.

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Check availability in my library

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Title:

Characteristics of silicon p-n junction formed by ion implantation with in situ ultrasound treatment

Contributors:

Melnik, V. P. (author) / Olikh, Y. M. (author) / Popov, V. G. (author) / Romanyuk, B. M. (author) / Goltvyanskii, Y. V. (author) / Evtukh, A. A. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 327-330

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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