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Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon

Liang, J. H. / Wu, C. H.

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Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon

Liang, J. H. / Wu, C. H.

Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon

Liang, J. H. / Wu, C. H.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon

Contributors:

Liang, J. H. (author) / Wu, C. H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 310 ; 230-234

Publication date:

2014-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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