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b-FeSi2 based metal-insulator-semiconductor devices formed by sputtering for optoelectronic applications
b-FeSi2 based metal-insulator-semiconductor devices formed by sputtering for optoelectronic applications
b-FeSi2 based metal-insulator-semiconductor devices formed by sputtering for optoelectronic applications
Ootsuka, T. (author) / Liu, Z. (author) / Osamura, M. (author) / Fukuzawa, Y. (author) / Otogawa, N. (author) / Nakayama, Y. (author) / Tanoue, H. (author) / Makita, Y. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 449-452
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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