The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi2 in Si: Fid-Bau Portal

The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi2 in Si

Chong, Y. T. / Li, Q. / Chow, C. F. / Ke, N. / Cheung, W. Y. / Wong, S. P. / Homewood, K. P.

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The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi2 in Si

Chong, Y. T. / Li, Q. / Chow, C. F. / Ke, N. / Cheung, W. Y. / Wong, S. P. / Homewood, K. P.

The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi2 in Si

Chong, Y. T. / Li, Q. / Chow, C. F. / Ke, N. / Cheung, W. Y. / Wong, S. P. / Homewood, K. P.

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Title:

The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi2 in Si

Contributors:

Chong, Y. T. (author) / Li, Q. (author) / Chow, C. F. (author) / Ke, N. (author) / Cheung, W. Y. (author) / Wong, S. P. (author) / Homewood, K. P. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 444-448

Publication date:

2005-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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