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    Recrystallization behavior of high-fluence N+-implanted GaAs studied by Raman spectroscopy

    New search for: Wang, J.
    New search for: Mao, H.
    New search for: Zhu, Z.
    New search for: Zhao, Q.
    New search for: Li, Z.
    New search for: Lu, W.

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    Recrystallization behavior of high-fluence N+-implanted GaAs studied by Raman spectroscopy

    New search for: Wang, J.
    New search for: Mao, H.
    New search for: Zhu, Z.
    New search for: Zhao, Q.
    New search for: Li, Z.
    New search for: Lu, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Recrystallization behavior of high-fluence N+-implanted GaAs studied by Raman spectroscopy

    New search for: Wang, J.
    New search for: Mao, H.
    New search for: Zhu, Z.
    New search for: Zhao, Q.
    New search for: Li, Z.
    New search for: Lu, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Recrystallization behavior of high-fluence N+-implanted GaAs studied by Raman spectroscopy

    Contributors:

    Wang, J. (author) / Mao, H. (author) / Zhu, Z. (author) / Zhao, Q. (author) / Li, Z. (author) / Lu, W. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 252 ; 2186-2190

    Publication date:

    2006-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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