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Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

dos Reis, R. M. / Maltez, R. L. / Moreira, E. C. / Dias, Y. P. / Boudinov, H.

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Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

dos Reis, R. M. / Maltez, R. L. / Moreira, E. C. / Dias, Y. P. / Boudinov, H.

Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

dos Reis, R. M. / Maltez, R. L. / Moreira, E. C. / Dias, Y. P. / Boudinov, H.

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Check availability in my library

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Document information

Title:

Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

Contributors:

dos Reis, R. M. (author) / Maltez, R. L. (author) / Moreira, E. C. (author) / Dias, Y. P. (author) / Boudinov, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 258 ; 7395-7400

Publication date:

2012-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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