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The effects of both surface segregation of In atoms and strain on the confinement profile of InGaAs/GaAs multi quantum wells
The effects of both surface segregation of In atoms and strain on the confinement profile of InGaAs/GaAs multi quantum wells
The effects of both surface segregation of In atoms and strain on the confinement profile of InGaAs/GaAs multi quantum wells
Smaoui, F. (author) / Mandhour, L. (author) / Maaref, M. A. (author) / Sfaxi, L. (author) / Maaref, H. (author) / Bennaceur, R. (author)
2006-01-01
6 pages
Article (Journal)
English
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