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Si c(4x4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane
Si c(4x4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane
Si c(4x4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane
Narita, Y. (author) / Inubushi, T. (author) / Yasui, K. (author) / Akahane, T. (author)
APPLIED SURFACE SCIENCE ; 212-213 ; 730-734
2003-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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