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Cell Sensing Margin of Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device
Cell Sensing Margin of Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device
Cell Sensing Margin of Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device
Choi, J. H. (author) / Yoo, H. S. (author) / Cho, K. W. (author) / Kim, N. K. (author) / Oh, S. H. (author) / Choi, E. S. (author) / Yeom, S. J. (author) / Sun, H. J. (author) / Lee, S. S. (author) / Lee, K. N. (author)
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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