Ferroelectric Properties of Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device: Fid-Bau Portal

Ferroelectric Properties of Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device

Cho, K. W. / Kim, N. K. / Oh, S. H. / Choi, E. S. / Sun, H. J. / Yeom, S. J. / Lee, K. N. / Lee, S. S. / Hong, S. K. / Choi, S. K.

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Ferroelectric Properties of Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device

Cho, K. W. / Kim, N. K. / Oh, S. H. / Choi, E. S. / Sun, H. J. / Yeom, S. J. / Lee, K. N. / Lee, S. S. / Hong, S. K. / Choi, S. K.

Ferroelectric Properties of Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device

Cho, K. W. / Kim, N. K. / Oh, S. H. / Choi, E. S. / Sun, H. J. / Yeom, S. J. / Lee, K. N. / Lee, S. S. / Hong, S. K. / Choi, S. K.

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Title:

Ferroelectric Properties of Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device

Contributors:

Cho, K. W. (author) / Kim, N. K. (author) / Oh, S. H. (author) / Choi, E. S. (author) / Sun, H. J. (author) / Yeom, S. J. (author) / Lee, K. N. (author) / Lee, S. S. (author) / Hong, S. K. (author) / Choi, S. K. (author)

Published in:

Eco-Materials Processing & Design VI ; 285-288

MATERIALS SCIENCE FORUM ; 486/487

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Choi, J. H. / Yoo, H. S. / Cho, K. W. et al. | British Library Online Contents | 2006

Grain Size and Orientation Control in Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited by Spin-On Method for High Density FeRAM Device

Kim, Y. M. / Jang, G. E. / Kim, N. K. et al. | British Library Online Contents | 2007

FERROELECTRIC PZT FILM, METHOD FOR MANUFACTURING THE SAME, CAPACITOR AND FeRAM DEVICE

PETER C VAN BUSKIRK / ROEDER JEFFREY F / STEVEN M BILODEAU et al. | European Patent Office | 2016

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