Donor passivation in pseudomorphic-high electron mobility transistors due to plasma-incorporated fluorine impurities observed using x-ray photoemission spectroscopy: Fid-Bau Portal

Donor passivation in pseudomorphic-high electron mobility transistors due to plasma-incorporated fluorine impurities observed using x-ray photoemission spectroscopy

Uchiyama, H. / Kikawa, T. / Taniguchi, T. / Shiota, T.

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Donor passivation in pseudomorphic-high electron mobility transistors due to plasma-incorporated fluorine impurities observed using x-ray photoemission spectroscopy

Uchiyama, H. / Kikawa, T. / Taniguchi, T. / Shiota, T.

Donor passivation in pseudomorphic-high electron mobility transistors due to plasma-incorporated fluorine impurities observed using x-ray photoemission spectroscopy

Uchiyama, H. / Kikawa, T. / Taniguchi, T. / Shiota, T.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Donor passivation in pseudomorphic-high electron mobility transistors due to plasma-incorporated fluorine impurities observed using x-ray photoemission spectroscopy

Contributors:

Uchiyama, H. (author) / Kikawa, T. (author) / Taniguchi, T. (author) / Shiota, T. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 21 ; 1331-1335

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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