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    Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation

    New search for: Tseng, W.F.
    New search for: Monk, D.H.

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    Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation

    New search for: Tseng, W.F.
    New search for: Monk, D.H.

    Access

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    Check availability in my library
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    Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation

    New search for: Tseng, W.F.
    New search for: Monk, D.H.

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Title:

    Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation

    Contributors:

    Tseng, W.F. (author) / Monk, D.H. (author)

    Published in:

    MATERIALS LETTERS ; 40 ; 235-239

    Publication date:

    1999-01-01

    Size:

    5 pages

    ISSN:

    0167-577X

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1105 / 530

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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