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    Inductively coupled plasma - plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

    New search for: Medjdoub, M.
    New search for: Courant, J. L.
    New search for: Maher, H.
    New search for: Post, G.

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    Inductively coupled plasma - plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

    New search for: Medjdoub, M.
    New search for: Courant, J. L.
    New search for: Maher, H.
    New search for: Post, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Inductively coupled plasma - plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

    New search for: Medjdoub, M.
    New search for: Courant, J. L.
    New search for: Maher, H.
    New search for: Post, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Inductively coupled plasma - plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

    Contributors:

    Medjdoub, M. (author) / Courant, J. L. (author) / Maher, H. (author) / Post, G. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80 ; 252 - 256

    Publication date:

    2001-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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