Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation

Tseng, W.F. / Monk, D.H. | British Library Online Contents | 1999

Inductively coupled plasma - plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

Medjdoub, M. / Courant, J. L. / Maher, H. et al. | British Library Online Contents | 2001

Performance of a GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an Electroless-Plated Treated Gate

Huang, C.C. / Chen, C.C. / Liou, J.K. et al. | British Library Online Contents | 2011

Growth and photoemission studies of Ag nanofilms on pseudomorphic fcc Fe(1 0 0)

Tanaka, A. / Sasaki, H. / Takahashi, K. et al. | British Library Online Contents | 2001

High-mobility Ambipolar Transistors and High-gain Inverters from a Donor-Acceptor Copolymer Semiconductor

Kim, F. S. / Guo, X. / Watson, M. D. et al. | British Library Online Contents | 2010