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    Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation

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    Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation

    New search for: Hoshino, N.
    New search for: Tajima, M.
    New search for: Hayashi, T.
    New search for: Nishiguchi, T.
    New search for: Kinoshita, H.
    New search for: Shiomi, H.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

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    Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation

    New search for: Hoshino, N.
    New search for: Tajima, M.
    New search for: Hayashi, T.
    New search for: Nishiguchi, T.
    New search for: Kinoshita, H.
    New search for: Shiomi, H.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

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    Document information
    Title:

    Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation

    Contributors:

    Hoshino, N. (author) / Tajima, M. (author) / Hayashi, T. (author) / Nishiguchi, T. (author) / Kinoshita, H. (author) / Shiomi, H. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I.

    Published in:

    Silicon Carbide and Related Materials 2006 ; 275-278

    MATERIALS SCIENCE FORUM ; 556/557

    Publication date:

    2007-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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