Analysis of electrically active N-O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy: Fid-Bau Portal

Analysis of electrically active N-O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy

Alt, H. C. / Gomeniuk, Y. V. / Bittersberger, F. / Kempf, A. / Zemke, D.

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Analysis of electrically active N-O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy

Alt, H. C. / Gomeniuk, Y. V. / Bittersberger, F. / Kempf, A. / Zemke, D.

Analysis of electrically active N-O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy

Alt, H. C. / Gomeniuk, Y. V. / Bittersberger, F. / Kempf, A. / Zemke, D.

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Document information

Title:

Analysis of electrically active N-O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy

Contributors:

Alt, H. C. (author) / Gomeniuk, Y. V. (author) / Bittersberger, F. (author) / Kempf, A. (author) / Zemke, D. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 114-116

Publication date:

2006-01-01

Size:

3 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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