A platform for research: civil engineering, architecture and urbanism
Steady-state Cs surface concentration on Si and Ge after low energy Cs+ bombardment by SIMS
Steady-state Cs surface concentration on Si and Ge after low energy Cs+ bombardment by SIMS
Steady-state Cs surface concentration on Si and Ge after low energy Cs+ bombardment by SIMS
Chen, P. (author) / Janssens, T. (author) / Vandervorst, W. (author)
APPLIED SURFACE SCIENCE ; 252 ; 7239-7242
2006-01-01
4 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Fast atom beam bombardment secondary ion mass spectrometry: FAB-SIMS
British Library Online Contents | 1993
|Fast atom beam bombardment secondary ion mass spectrometry: FAB-SIMS
British Library Online Contents | 1993
|Cesium near-surface concentration in low energy, negative mode dynamic SIMS
British Library Online Contents | 2008
|Metal-assisted SIMS and cluster ion bombardment for ion yield enhancement
British Library Online Contents | 2008
|Study and optimisation of SIMS performed with He^+ and Ne^+ bombardment
British Library Online Contents | 2013
|