Backside Growth Thick Porous Silicon Layers for High Q on-Chip RF Integrated Inductors: Fid-Bau Portal

Backside Growth Thick Porous Silicon Layers for High Q on-Chip RF Integrated Inductors

Li, Y. / Yi, Z. / Guoyan, Z.

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Backside Growth Thick Porous Silicon Layers for High Q on-Chip RF Integrated Inductors

Li, Y. / Yi, Z. / Guoyan, Z.

Backside Growth Thick Porous Silicon Layers for High Q on-Chip RF Integrated Inductors

Li, Y. / Yi, Z. / Guoyan, Z.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Backside Growth Thick Porous Silicon Layers for High Q on-Chip RF Integrated Inductors

Contributors:

Li, Y. (author) / Yi, Z. (author) / Guoyan, Z. (author)

Published in:

RARE METAL MATERIALS AND ENGINEERING ; 35 ; 966-969

Publication date:

2006-01-01

Size:

4 pages

ISSN:

1002-185X

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 669

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