Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature: Fid-Bau Portal

Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature

Yang, C. H. / Lee, S. C. / Lin, T. C. / Zhuang, W. Y.

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Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature

Yang, C. H. / Lee, S. C. / Lin, T. C. / Zhuang, W. Y.

Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature

Yang, C. H. / Lee, S. C. / Lin, T. C. / Zhuang, W. Y.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Ähnliche Titel

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Titel:

Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature

Beteiligte:

Yang, C. H. (Autor:in) / Lee, S. C. (Autor:in) / Lin, T. C. (Autor:in) / Zhuang, W. Y. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 134 ; 68-75

Erscheinungsdatum:

01.01.2006

Format / Umfang:

8 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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