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Atomistic modeling of dislocation activity in nanoindented GaAs
Atomistic modeling of dislocation activity in nanoindented GaAs
Atomistic modeling of dislocation activity in nanoindented GaAs
Jian, S. R. (author) / Fang, T. H. (author) / Chuu, D. S. (author) / Ji, L. W. (author)
APPLIED SURFACE SCIENCE ; 253 ; 833-840
2006-01-01
8 pages
Article (Journal)
English
DDC:
621.35
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