Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Impact of Annealing Temperature Ramps on the Electrical Activation of N^+ and P^+ Co-Implanted SiC Layers
Impact of Annealing Temperature Ramps on the Electrical Activation of N^+ and P^+ Co-Implanted SiC Layers
Impact of Annealing Temperature Ramps on the Electrical Activation of N^+ and P^+ Co-Implanted SiC Layers
Blanque, S. (Autor:in) / Perez, R. (Autor:in) / Mestres, N. (Autor:in) / Contreras, S. (Autor:in) / Camassel, J. (Autor:in) / Godignon, P. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers
| British Library Online Contents | 2004
A Light-Induced Annealing of Silicon Implanted Layers
| British Library Online Contents | 2008
| British Library Online Contents | 2001