Current Analysis of Ion Implanted p^+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient: Fid-Bau Portal

Current Analysis of Ion Implanted p^+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

Nipoti, R. / Bergamini, F. / Moscatelli, F. / Poggi, A. / Canino, M. / Bertuccio, G.

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Current Analysis of Ion Implanted p^+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

Nipoti, R. / Bergamini, F. / Moscatelli, F. / Poggi, A. / Canino, M. / Bertuccio, G.

Current Analysis of Ion Implanted p^+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

Nipoti, R. / Bergamini, F. / Moscatelli, F. / Poggi, A. / Canino, M. / Bertuccio, G.

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Title:

Current Analysis of Ion Implanted p^+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

Contributors:

Nipoti, R. (author) / Bergamini, F. (author) / Moscatelli, F. (author) / Poggi, A. (author) / Canino, M. (author) / Bertuccio, G. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 815-818

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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