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Al^+ Implanted 4H-SiC p^+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation
Al^+ Implanted 4H-SiC p^+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation
Al^+ Implanted 4H-SiC p^+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation
Grossner, U. (author) / Moscatelli, F. (author) / Nipoti, R. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T. / Matsuura, H.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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