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    Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics

    New search for: Tanimoto, S.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

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    Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics

    New search for: Tanimoto, S.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics

    New search for: Tanimoto, S.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics

    Contributors:

    Tanimoto, S. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

    Published in:

    Silicon Carbide and Related Materials - 2005 ; 955-960

    MATERIALS SCIENCE FORUM ; 527/529

    Publication date:

    2006-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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