Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes: Fid-Bau Portal

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Raineri, V. / Roccaforte, F. / Libertino, S. / Ruggiero, A. / Massimino, V. / Calcagno, L.

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Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Raineri, V. / Roccaforte, F. / Libertino, S. / Ruggiero, A. / Massimino, V. / Calcagno, L.

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Raineri, V. / Roccaforte, F. / Libertino, S. / Ruggiero, A. / Massimino, V. / Calcagno, L.

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Title:

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Contributors:

Raineri, V. (author) / Roccaforte, F. (author) / Libertino, S. (author) / Ruggiero, A. (author) / Massimino, V. (author) / Calcagno, L. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 1167-1170

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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