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Fast Switching (41 MHz), 2.5 mOmegaΩcm^2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications
Fast Switching (41 MHz), 2.5 mOmegaΩcm^2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications
Fast Switching (41 MHz), 2.5 mOmegaΩcm^2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications
Cheng, L. (author) / Casady, J. R. B. (author) / Mazzola, M. S. (author) / Bondarenko, V. (author) / Kelley, R. L. (author) / Sankin, I. (author) / Merrett, J. N. (author) / Casady, J. B. (author) / Devaty, R. P. / Larkin, D. J.
Silicon Carbide and Related Materials - 2005 ; 1183-1186
MATERIALS SCIENCE FORUM ; 527/529
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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