A platform for research: civil engineering, architecture and urbanism
Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications
Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications
Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications
Ritenour, A. (author) / Bondarenko, V. (author) / Kelley, R.L. (author) / Sheridan, D.C. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 715-718
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Thermal Runaway Robustness of SiC VJFETs
British Library Online Contents | 2013
|Electro-Thermal SPICE Model for High-Voltage SiC VJFETs
British Library Online Contents | 2009
|British Library Online Contents | 2006
|Fast Switching with SiC VJFETs - Influence of the Device Topology
British Library Online Contents | 2010
|British Library Online Contents | 2003
|