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High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide

Konstantinov, A. O. / Svedberg, J. O. / Ray, I. C. / Harris, C. I. / Hallin, C. / Larsson, B. O.

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High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide

Konstantinov, A. O. / Svedberg, J. O. / Ray, I. C. / Harris, C. I. / Hallin, C. / Larsson, B. O.

High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide

Konstantinov, A. O. / Svedberg, J. O. / Ray, I. C. / Harris, C. I. / Hallin, C. / Larsson, B. O.

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Title:

High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide

Contributors:

Konstantinov, A. O. (author) / Svedberg, J. O. (author) / Ray, I. C. (author) / Harris, C. I. (author) / Hallin, C. (author) / Larsson, B. O. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 1231-1234

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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