4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal: Fid-Bau Portal

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

Fedison, J. B. / Cowen, C. S. / Garrett, J. L. / Downey, E. T. / Kretchmer, J. W. / Klinger, R. L. / Peters, H. C. / Tucker, J. B. / Matocha, K. S. / Rowland, L. B.

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4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

Fedison, J. B. / Cowen, C. S. / Garrett, J. L. / Downey, E. T. / Kretchmer, J. W. / Klinger, R. L. / Peters, H. C. / Tucker, J. B. / Matocha, K. S. / Rowland, L. B.

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

Fedison, J. B. / Cowen, C. S. / Garrett, J. L. / Downey, E. T. / Kretchmer, J. W. / Klinger, R. L. / Peters, H. C. / Tucker, J. B. / Matocha, K. S. / Rowland, L. B.

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Check availability in my library

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Document information

Title:

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

Contributors:

Fedison, J. B. (author) / Cowen, C. S. (author) / Garrett, J. L. (author) / Downey, E. T. (author) / Kretchmer, J. W. (author) / Klinger, R. L. (author) / Peters, H. C. (author) / Tucker, J. B. (author) / Matocha, K. S. (author) / Rowland, L. B. (author)

Published in:

Silicon Carbide and Related Materials - 2005 ; 1265-1268

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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