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4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs

Suvorov, A. V. / Lipkin, L. A. / Johnson, G. M. / Singh, R. / Palmour, J. W.

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4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs

Suvorov, A. V. / Lipkin, L. A. / Johnson, G. M. / Singh, R. / Palmour, J. W.

4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs

Suvorov, A. V. / Lipkin, L. A. / Johnson, G. M. / Singh, R. / Palmour, J. W.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs

Contributors:

Suvorov, A. V. (author) / Lipkin, L. A. (author) / Johnson, G. M. (author) / Singh, R. (author) / Palmour, J. W. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1275-1278

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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