Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs: Fid-Bau Portal

Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs

Imaizumi, M. / Tarui, Y. / Sugimoto, H. / Ohtsuka, K. / Takami, T. / Ozeki, T.

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Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs

Imaizumi, M. / Tarui, Y. / Sugimoto, H. / Ohtsuka, K. / Takami, T. / Ozeki, T.

Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs

Imaizumi, M. / Tarui, Y. / Sugimoto, H. / Ohtsuka, K. / Takami, T. / Ozeki, T.

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Title:

Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs

Contributors:

Imaizumi, M. (author) / Tarui, Y. (author) / Sugimoto, H. (author) / Ohtsuka, K. (author) / Takami, T. (author) / Ozeki, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 1203-1206

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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