A platform for research: civil engineering, architecture and urbanism
Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation
Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation
Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation
Nakayama, K. (author) / Sugawara, Y. (author) / Ishii, R. (author) / Tsuchida, H. (author) / Miyanagi, T. (author) / Kamata, I. (author) / Nakamura, T. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
Silicon Carbide and Related Materials - 2005 ; 1359-1362
MATERIALS SCIENCE FORUM ; 527/529
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
8.3 kV 4H-SiC PiN Diode on (0001) C-Face with Small Forward Voltage Degradation
British Library Online Contents | 2005
|Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode
British Library Online Contents | 2014
|6.2kV 4H-SiC pin Diode with Low Forward Voltage Drop
British Library Online Contents | 2000
|British Library Online Contents | 1996
|A 2.8 kV, 2 V Forward Drop JBS Diode with Low Leakage
British Library Online Contents | 2000
|