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    Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode

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    Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode

    New search for: Yamamoto, S.
    New search for: Nakao, Y.
    New search for: Tomita, N.
    New search for: Nakata, S.
    New search for: Yamakawa, S.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

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    Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode

    New search for: Yamamoto, S.
    New search for: Nakao, Y.
    New search for: Tomita, N.
    New search for: Nakata, S.
    New search for: Yamakawa, S.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

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    Document information
    Title:

    Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode

    Contributors:

    Yamamoto, S. (author) / Nakao, Y. (author) / Tomita, N. (author) / Nakata, S. (author) / Yamakawa, S. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.

    Published in:

    Silicon Carbide and Related Materials 2013 ; 951-954

    MATERIALS SCIENCE FORUM ; 778/780

    Publication date:

    2014-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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