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Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AIN Capped Annealing
Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AIN Capped Annealing
Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AIN Capped Annealing
Zhu, L. (author) / Losee, P. A. (author) / Chow, T. P. (author) / Jones, K. A. (author) / Scozzie, C. J. (author) / Ervin, M. H. (author) / Shah, P. B. (author) / Derenge, M. A. (author) / Vispute, R. D. (author) / Venkatesan, T. (author)
Silicon Carbide and Related Materials - 2005 ; 1367-1370
MATERIALS SCIENCE FORUM ; 527/529
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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