Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing: Fid-Bau Portal

Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing

Wang, Y. / Losee, P. A. / Balachandran, S. / Bhat, I. / Chow, T. P. / Skromme, B. J. / Kim, J. K. / Schubert, E. F.

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Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing

Wang, Y. / Losee, P. A. / Balachandran, S. / Bhat, I. / Chow, T. P. / Skromme, B. J. / Kim, J. K. / Schubert, E. F.

Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing

Wang, Y. / Losee, P. A. / Balachandran, S. / Bhat, I. / Chow, T. P. / Skromme, B. J. / Kim, J. K. / Schubert, E. F.

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Title:

Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing

Contributors:

Wang, Y. (author) / Losee, P. A. (author) / Balachandran, S. (author) / Bhat, I. (author) / Chow, T. P. (author) / Skromme, B. J. (author) / Kim, J. K. (author) / Schubert, E. F. (author) / Wright, N. / Johnson, C. M.

Published in:

Silicon Carbide and Related Materials 2006 ; 567-570

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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