Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AIN Capped Annealing: Fid-Bau Portal

Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AIN Capped Annealing

Zhu, L. / Losee, P. A. / Chow, T. P. / Jones, K. A. / Scozzie, C. J. / Ervin, M. H. / Shah, P. B. / Derenge, M. A. / Vispute, R. D. / Venkatesan, T.

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Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AIN Capped Annealing

Zhu, L. / Losee, P. A. / Chow, T. P. / Jones, K. A. / Scozzie, C. J. / Ervin, M. H. / Shah, P. B. / Derenge, M. A. / Vispute, R. D. / Venkatesan, T.

Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AIN Capped Annealing

Zhu, L. / Losee, P. A. / Chow, T. P. / Jones, K. A. / Scozzie, C. J. / Ervin, M. H. / Shah, P. B. / Derenge, M. A. / Vispute, R. D. / Venkatesan, T.

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Titel:

Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AIN Capped Annealing

Beteiligte:

Zhu, L. (Autor:in) / Losee, P. A. (Autor:in) / Chow, T. P. (Autor:in) / Jones, K. A. (Autor:in) / Scozzie, C. J. (Autor:in) / Ervin, M. H. (Autor:in) / Shah, P. B. (Autor:in) / Derenge, M. A. (Autor:in) / Vispute, R. D. (Autor:in) / Venkatesan, T. (Autor:in)

Erschienen in:

Silicon Carbide and Related Materials - 2005 ; 1367-1370

MATERIALS SCIENCE FORUM ; 527/529

Erscheinungsdatum:

01.01.2006

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

Zhu, L. / Shanbhag, M. / Chow, T. P. et al. | British Library Online Contents | 2003

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