Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers: Fid-Bau Portal

Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers

Ha, S. / Mieszkowski, P. / Rowland, L. B. / Skowronski, M.

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Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers

Ha, S. / Mieszkowski, P. / Rowland, L. B. / Skowronski, M.

Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers

Ha, S. / Mieszkowski, P. / Rowland, L. B. / Skowronski, M.

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Check availability in my library

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Document information

Title:

Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers

Contributors:

Ha, S. (author) / Mieszkowski, P. (author) / Rowland, L. B. (author) / Skowronski, M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 231-234

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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